EP4CE15F1717N vs EP4CE15E22C7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE15F1717N sa pamamagitan ng Intel at EP4CE15E22C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE15F1717N | EP4CE15E22C7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 15,408 | — |
| Embedded Memory | 516,096 bits (56 M9K blocks) | — |
| Embedded 18x18 Multipliers | 56 | — |
| Maximum User I/Os | 165 | — |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Process Technology | 60 nm low-power | 60 nm low-power CMOS |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | — |
| Temperature na Operasyon | 0C to +85C (commercial "N" suffix) | — |
| Packhaging | 256-ball F-BGA (FBGA-256) | — |
| Package Pitch | 1.0 mm | — |
| LVDS Performance | Up to 343 Mbps | — |
| Speed Grade | 7 | -7 |
| Configuration Mode | External serial/parallel flash (volatile SRAM) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 (168 hours) | — |
| Logic Elements | — | 15,408 |
| Total Memory Bits | — | 516,096 |
| Number of I/O Pins | — | 81 |
| Supply Voltage (VCCINT) | — | 1.2 V |
| Hanay ng Temperature na Operasyon | — | 0 °C to +85 °C (commercial) |
| Package Type | — | 144-pin EQFP with exposed pad |
| Uri ng Pagpapasok | — | Surface Mount |
| Embedded Multipliers (18x18) | — | 56 |
| Configuration Modes | — | AS, PS, JTAG, Fast Passive Parallel |
| Lead Free | — | Yes |