EP4CE15U14A7N vs EP4CE15F23C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE15U14A7N sa pamamagitan ng Intel at EP4CE15F23C8N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE15U14A7N | EP4CE15F23C8N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone IV E | — |
| Logic Elements (LE) | 15,408 | — |
| Total Memory Bits | 516,096 bits | — |
| Embedded 18x18 Multipliers | 56 | — |
| General-Purpose PLLs | 4 | — |
| Maximum User I/Os | 165 | — |
| Packhaging | 256-ball UBGA (Ultra-FineLine BGA) | 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) |
| Speed Grade | 7 | C8 (commercial, 8 ns internal timing) |
| Core Voltage | 1.2 V | — |
| Process Node | 60 nm low-power | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to 85C (Commercial) |
| Configuration Modes | JTAG, AS, AP, PS | AS / PS / JTAG / FPP |
| Bitstream Encryption | AES-128 (security-enhanced variant) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| Tindminan RoHS | Compliant (per distributor listings) | Compliant |
| Series | — | Cyclone IV E |
| Logic Elements | — | 15,408 |
| Embedded Memory Bits | — | 516,096 bits (63 KBytes) |
| Embedded Multipliers (18x18) | — | 343 |
| General-purpose PLLs | — | 4 |
| Maximum User I/O Pins | — | 343 |
| Process Technology | — | 60 nm low-leakage CMOS |
| Core Voltage (VCCINT) | — | 1.0 V to 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |
| Level ng MSL | — | MSL3 (per JEDEC J-STD-020) |
| Hard IP Blocks | — | PCIe Gen1 root port, external memory interface |
| Embedded Memory Type | — | M9K (9 Kbit each) |