EP4CE55F23I7N vs EP4CE75F23I7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE55F23I7N sa pamamagitan ng Intel at EP4CE75F23I7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE55F23I7N | EP4CE75F23I7 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Logic Elements | 55,856 | — |
| Configurable Logic Blocks (CLBs) | 3,491 | — |
| Embedded Memory | 2,396,160 bits | — |
| Embedded 18x18 Multipliers | 56 | 274 |
| PLLs | 4 | — |
| Maximum User I/O | 324 | 426 |
| Packhaging | 484-ball FBGA (23x23 mm, 1.0 mm pitch) | 484-ball FineLine BGA (F23) |
| Process Technology | TSMC 60 nm low-power | 60 nm low-power |
| Core Voltage | 1.2 V | — |
| Temperature na Operasyon | -40C to +100C (industrial, I7 grade) | -40C to +85C (industrial) |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Lead-Free / RoHS | Yes (lead-free finish) | — |
| Configuration Modes | JTAG, AS, PS, FPP | AS, PS, FPP, JTAG |
| Memory Interface Support | DDR, DDR2, QDRII | — |
| Family | — | Cyclone IV E |
| Logic Elements (LE) | — | 75,408 |
| Embedded Memory (bits) | — | 2,810,880 |
| General Purpose PLLs | — | 4 |
| Global Clock Networks | — | 20 |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V |
| Bitstream Encryption | — | AES-128 |
| Tindminan RoHS | — | Compliant |
| Speed Grade | — | I7 |
| Level ng MSL | — | 3 |