EP4CE55F29I8N vs EP4CE55F29C9LN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE55F29I8N sa pamamagitan ng Altera at EP4CE55F29C9LN sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE55F29I8N | EP4CE55F29C9LN |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Logic Elements (LEs) | 55,856 | — |
| Embedded Memory (bits) | 2,396,160 | — |
| Embedded 18x18 Multipliers | 374 | 374 |
| General-Purpose PLLs | 4 | — |
| Maximum User I/O Pins | [DATA_NEEDED: maximum user I/O count for F29 package] | 374 |
| Packhaging | 780-ball FBGA (F29, 29x29 mm) | 780-ball FBGA (F29) |
| Process Technology | 60 nm low-power CMOS | — |
| Temperature na Operasyon | -40C to +100C (Industrial grade, suffix I) | — |
| Supply Voltage Core | 1.0 V (typical, VCCINT) | — |
| I/O Bank Supply Voltages | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | — |
| Configuration Modes | Active Serial (AS), Passive Serial (PS), JTAG, Fast Passive Parallel (FPP) | — |
| External Memory Interfaces | DDR, DDR2, SDR, QDRII, QDRII+ SRAM | — |
| Differential I/O Standards | LVDS, RSDS, mini-LVDS, LVPECL (receive) | — |
| Tindminan RoHS | Compliant | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Family | — | Cyclone IV E |
| Logic Elements (LE) | — | 55,856 |
| Embedded Memory | — | 2,396,160 bits |
| Logic Array Blocks (LAB) | — | 3,491 |
| M9K Memory Blocks | — | 260 |
| PLLs | — | 4 |
| Technology Node | — | 60 nm |
| Core Voltage (VCCINT) | — | 1.2 V |
| Temperature ng Junction na Operasyon | — | 0 °C to 85 °C (commercial) |
| Lead-Free / RoHS | — | Yes (Pb-free terminal finish, suffix 'N') |
| Speed Grade | — | C9 |