EP4CE55U19I7N vs EP4CE40U19I7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE55U19I7N sa pamamagitan ng Intel at EP4CE40U19I7N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE55U19I7N | EP4CE40U19I7N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements | 55,856 | 39,600 |
| Embedded Memory (bits) | 2,396,160 | 1,161,216 |
| Maximum User I/O | 324 | — |
| Embedded 18x18 Multipliers | 156 | 116 |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Process Technology | 60 nm | — |
| Core Voltage (VCCINT) | 1.0 V or 1.2 V | 1.0 V / 1.2 V |
| I/O Voltage (VCCIO) | 1.2 V to 3.3 V (per bank) | — |
| Packhaging | 484-ball UBGA (Ultra FineLine BGA) | 484-FBGA (U19, 19x19 mm, 1.0 mm pitch) |
| Configuration Support | AS, PS, JTAG | — |
| Temperature na Operasyon | -40C to +100C (Industrial) | -40 °C to +100 °C (Industrial, junction) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Tindminan RoHS | Compliant | Compliant (lead-free) |
| Embedded Memory (approx) | — | 144 Kbytes |
| Maximum User I/Os | — | 328 |
| I/O Standards | — | LVCMOS/LVTTL 1.2 V / 2.5 V / 3.0 V / 3.3 V |
| Process | — | 60 nm low-k |
| Configuration | — | SRAM-based (volatile, external flash required) |
| Speed Grade | — | 7 |