EP4CE75F23I8LN vs EP4CE75F23I7N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE75F23I8LN sa pamamagitan ng Intel at EP4CE75F23I7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE75F23I8LN EP4CE75F23I7N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Cyclone IV E —
Family Cyclone IV E (EP4CE75) Cyclone IV E (EP4CE)
Logic Elements (LE) 75,408 —
Logic Array Blocks (LAB) [DATA_NEEDED: LAB count] —
Embedded Memory (M9K blocks) 305 blocks —
Embedded Memory (bits) 2,810,880 bits —
Embedded 18 x 18 Multipliers 244 —
General-purpose PLLs 4 —
Maximum User I/Os 292 292
User I/O Banks 8 —
Packhaging 484-ball FBGA (F23) 1.0 mm pitch 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch)
Supply Voltage - Core 1.2 V —
Temperature na Operasyon -40C to +100C (Industrial) —
Process Technology 60 nm low-power CMOS 60 nm low-power CMOS
Configuration Modes JTAG, AS, PS, FPP Active Serial (AS), Passive Serial (PS), JTAG
Tindminan RoHS Compliant Compliant
Level ng MSL 3 —
Product Line — Cyclone IV E
Logic Elements (LEs) — 75,408
Logic Array Blocks (LABs) — 4,713
Embedded Memory Bits — 2,810,880 bits (312 M9K blocks)
Distributed RAM Bits — 200 Kbits
Embedded 18x18 Multipliers — 15
PLLs — 4
Global Clocks — [DATA_NEEDED: global clock network count]
Core Voltage (VCCINT) — 1.2 V nominal
I/O Voltage (VCCIO) — 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank)
Operating Temperature Grade — Industrial (I7: -40C to +100C Tj)
External Memory Interfaces — DDR / DDR2 SDRAM, QDRII SRAM
Design Software — Quartus II / Quartus Prime

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