EP4CE75F23I8LN vs EP4CE75F23I7N 比較

詳細並排比較 EP4CE75F23I8LN 由 Intel 與 EP4CE75F23I7N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP4CE75F23I8LN EP4CE75F23I7N
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 啟用中
Series Cyclone IV E —
Family Cyclone IV E (EP4CE75) Cyclone IV E (EP4CE)
Logic Elements (LE) 75,408 —
Logic Array Blocks (LAB) [DATA_NEEDED: LAB count] —
Embedded Memory (M9K blocks) 305 blocks —
Embedded Memory (bits) 2,810,880 bits —
Embedded 18 x 18 Multipliers 244 —
General-purpose PLLs 4 —
Maximum User I/Os 292 292
User I/O Banks 8 —
封裝 484-ball FBGA (F23) 1.0 mm pitch 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch)
Supply Voltage - Core 1.2 V —
工作溫度 -40C to +100C (Industrial) —
Process Technology 60 nm low-power CMOS 60 nm low-power CMOS
Configuration Modes JTAG, AS, PS, FPP Active Serial (AS), Passive Serial (PS), JTAG
RoHS 狀態 Compliant Compliant
MSL 等級 3 —
Product Line — Cyclone IV E
Logic Elements (LEs) — 75,408
Logic Array Blocks (LABs) — 4,713
Embedded Memory Bits — 2,810,880 bits (312 M9K blocks)
Distributed RAM Bits — 200 Kbits
Embedded 18x18 Multipliers — 15
PLLs — 4
Global Clocks — [DATA_NEEDED: global clock network count]
Core Voltage (VCCINT) — 1.2 V nominal
I/O Voltage (VCCIO) — 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank)
Operating Temperature Grade — Industrial (I7: -40C to +100C Tj)
External Memory Interfaces — DDR / DDR2 SDRAM, QDRII SRAM
Design Software — Quartus II / Quartus Prime

資料表與資源

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