EP4CE75F29C7N vs EP4CE75F29I7 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE75F29C7N sa pamamagitan ng Altera at EP4CE75F29I7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE75F29C7N EP4CE75F29I7
Brand Altera Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV E —
Logic Elements (LE) 75,408 —
Embedded Memory (bits) 2,810,880 2,810,880
Memory Blocks M9K (9 Kbit blocks) —
Maximum User I/O 426 —
Embedded 18x18 Multipliers 200 —
General-purpose PLLs 4 —
Global Clock Networks 20 —
Process Technology 60 nm low-power —
Core Supply Voltage 1.2 V —
Packhaging 780-ball FineLine BGA (F29), 29x29 mm 780-ball FBGA (FineLine BGA)
Speed Grade C7 (commercial, 7th speed bin) —
Operating Temperature (Commercial) 0C to +85C —
Configuration Modes JTAG, AS, PS, FPP JTAG, Active Serial (AS), Passive Serial (PS)
LVDS Support Up to 3.125 Gbps (dedicated SERDES blocks) —
Tindminan RoHS Compliant Compliant
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount (BGA)
Level ng MSL 3 (per JEDEC J-STD-020) 3 (168 hours)
Series — Cyclone IV E
Manufacturer — Intel (formerly Altera)
Logic Elements (LEs) — 75,408
Embedded Memory Blocks — 274 (M9K)
Embedded 18×18 Multipliers — 200
PLLs — 4
User I/O Count — 426
Temperature na Operasyon — -40 °C to +100 °C (Industrial)
Process Node — 60 nm low-power CMOS
Core Voltage (VCCINT) — 1.0 V / 1.2 V selectable
I/O Standards Supported — LVDS, LVTTL, LVCMOS, SSTL, HSTL
External Memory Interfaces — DDR/DDR2 SDRAM, QDRII SRAM

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