EP4CE75F29I7 vs EP4CE75F29C7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE75F29I7 sa pamamagitan ng Intel at EP4CE75F29C7N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE75F29I7 | EP4CE75F29C7N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 75,408 | — |
| Embedded Memory (bits) | 2,810,880 | 2,810,880 |
| Embedded Memory Blocks | 274 (M9K) | — |
| Embedded 18×18 Multipliers | 200 | — |
| PLLs | 4 | — |
| User I/O Count | 426 | — |
| Packhaging | 780-ball FBGA (FineLine BGA) | 780-ball FineLine BGA (F29), 29x29 mm |
| Temperature na Operasyon | -40 °C to +100 °C (Industrial) | — |
| Process Node | 60 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V selectable | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS) | JTAG, AS, PS, FPP |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| External Memory Interfaces | DDR/DDR2 SDRAM, QDRII SRAM | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 (168 hours) | 3 (per JEDEC J-STD-020) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Family | — | Cyclone IV E |
| Logic Elements (LE) | — | 75,408 |
| Memory Blocks | — | M9K (9 Kbit blocks) |
| Maximum User I/O | — | 426 |
| Embedded 18x18 Multipliers | — | 200 |
| General-purpose PLLs | — | 4 |
| Global Clock Networks | — | 20 |
| Process Technology | — | 60 nm low-power |
| Core Supply Voltage | — | 1.2 V |
| Speed Grade | — | C7 (commercial, 7th speed bin) |
| Operating Temperature (Commercial) | — | 0C to +85C |
| LVDS Support | — | Up to 3.125 Gbps (dedicated SERDES blocks) |