EPF6010ATC100-3N vs EPF6016AFC100-3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF6010ATC100-3N sa pamamagitan ng Intel at EPF6016AFC100-3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel
EPF6010ATC100-3N ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | EPF6010ATC100-3N | EPF6016AFC100-3 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | Obsolete |
| Family | FLEX 6000 | FLEX 6000 |
| Logic Elements / Cells | 880 | — |
| Equivalent Gate Count | 10,000 gates | — |
| Logic Array Blocks (LABs) | 88 | — |
| User I/Os | 71 | — |
| Supply Voltage (Operating) | 3.0 V to 3.6 V | — |
| Maximum Internal Frequency | 142.86 MHz | 142.86 MHz |
| Process Technology | 0.42 µm CMOS | 0.42 um CMOS |
| Speed Grade | -3 | — |
| Packhaging | 100-pin TQFP (14 x 14 x 1.4 mm) | 100-pin FineLine BGA (FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Temperature na Operasyon | 0 °C to +70 °C (commercial) | 0 C to 85 C (Commercial) |
| Programming Method | In-system SRAM via ByteBlaster/BitBlaster | — |
| Level ng MSL | 3 (168 hours) | — |
| Tindminan RoHS | Compliant | unknown |
| Device Type | — | FPGA (Field Programmable Gate Array) |
| Logic Gates | — | 16,000 gates |
| Logic Cells | — | 1,320 cells |
| User I/O | — | 81 |
| Volte ng Pagbibigay | — | 3.3 V |
| Architecture | — | SRAM-based, 4-input LUT |
| Configuration Method | — | SRAM (in-system programmable) |
| JTAG Support | — | IEEE 1149.1 Boundary Scan |