EPM3064ATC44-7N vs EPM3064ATI44-7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPM3064ATC44-7N sa pamamagitan ng Altera at EPM3064ATI44-7N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EPM3064ATC44-7N | EPM3064ATI44-7N |
|---|---|---|
| Brand | Altera | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | NRND |
| Family | MAX 3000A | MAX 3000A |
| Device Type | CPLD (Complex Programmable Logic Device) | — |
| Macro Cells | 64 | — |
| Logic Array Blocks | 2 | — |
| Usable Gates | 1,250 | 1,250 gates |
| User I/O Pins | 34 | — |
| Bilang ng Pins | 44 | — |
| Speed Grade | -7 (7.5 ns pin-to-pin delay) | — |
| Pin-to-Pin Delay (tPD) | 7.5 ns | — |
| Maximum Counter Frequency | 192.3 MHz (-7 grade) | — |
| Supply Voltage (VCC) | 3.3 V | — |
| MultiVolt I/O | 1.8 V / 2.5 V / 3.3 V | — |
| Programmability | EEPROM, in-system programmable (ISP) | — |
| JTAG Interface | IEEE Std. 1149.1 compliant | — |
| ISP Standard | IEEE Std. 1532 compliant | — |
| Boundary-Scan Test (BST) | Built-in, JTAG-driven | — |
| Packhaging | 44-pin TQFP | 44-pin TQFP (10x10 mm, 0.8 mm pitch) |
| Temperature na Operasyon | 0°C to +85°C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | Compliant (lead-free, 'N' suffix) |
| Logic Elements / Macrocells | — | 64 macrocells |
| Maximum Frequency (fMAX) | — | 135.1 MHz |
| Pin-to-Pin Logic Delay | — | 7 ns (speed grade -7) |
| User I/O Count | — | 34 I/O |
| Dedicated Input Pins | — | 4 |
| Supply Voltage (VCCINT) | — | 3.3 V |
| I/O Bank Voltage (VCCIO) | — | 1.8 V / 2.5 V / 3.3 V / 5 V tolerant (multiVolt) |
| Program Memory Type | — | EEPROM (in-system programmable) |
| Programming Interface | — | IEEE 1149.1 JTAG |
| Operating Temperature Grade | — | Industrial (-40C to +85C) |
| Process Technology | — | 0.30 µm CMOS EEPROM |