H5AN8G8NAFR-UHC vs H5AN8G4NAFR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-UHC sa pamamagitan ng SK hynix at H5AN8G4NAFR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-UHC | H5AN8G4NAFR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasyon | 1G x 8 | 2G x 4 |
| Rate ng Data | 2400 Mbps/pin (PC2400) | 2666 Mbps per pin (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V (DDR4 standard) | 1.2 V |
| Interface | CMOS, synchronous | — |
| Packhaging | FBGA-78 (PBGA78) | 78-ball FBGA (PBGA78) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Speed Grade Suffix | UHC | — |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Application Class | Main memory (high density, high bandwidth) | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: Operating Temperature] |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | 19 (CL19, speed bin VK) |
| Refresh | [DATA_NEEDED: Refresh specification] | [DATA_NEEDED: Refresh specification] |
| Level ng MSL | [DATA_NEEDED: MSL Level] | — |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Technology | — | CMOS |
| Application | — | Main memory requiring large density and high bandwidth |
| Datasheet Revision | — | Rev. 1.2 (Jul. 2017) |