H5TC4G63AFR-PBA vs K4B4G1646F-BYK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBA sa pamamagitan ng SK hynix at K4B4G1646F-BYK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBA | K4B4G1646F-BYK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $3.98 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasyon | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 1866 Mbps |
| Packhaging | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 |
| CAS Latency (CL) | 11, 12, 13 | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (Tcase) | — |
| Interface | 16-bit I/O | Parallel |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Laki ng Memory | — | 4 Gb |
| Memory Organization | — | 256M x 16 |
| Volte ng Pagbibigay | — | 1.35V / 1.5V |
| Clock Frequency | — | 933 MHz |
| Temperature na Operasyon | — | 0°C to 95°C (TC) |
| Latensya ng CAS | — | Programmable |
| On-Die Termination | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |