H5TC4G63MFR-PBA vs MT41K256M16HA-15EM:E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63MFR-PBA sa pamamagitan ng SK hynix at MT41K256M16HA-15EM:E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63MFR-PBA | MT41K256M16HA-15EM:E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 1333 Mbps (DDR3L-1333) |
| Packhaging | 96-ball FBGA | 96-ball FBGA (9x14mm) |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | — |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Volte ng Pagbibigay | — | 1.35 V (1.5V compatible) |
| Latensya ng CAS | — | 15 |
| Uri ng Pagpapasok | — | Surface Mount |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Bilang ng Pins | — | 96 |
| Access Time | — | 13.75 ns |
| Clock Frequency | — | 800 MHz |
| Interface | — | Parallel |