IAUC80N04S6N036ATMA1 vs IAUC60N06S5L073ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC80N04S6N036ATMA1 sa pamamagitan ng Infineon at IAUC60N06S5L073ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon
IAUC80N04S6N036ATMA1 ✓ NakahandaInfineon
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC80N04S6N036ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS-6 40 V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at T_C | 80 A | — |
| Power Dissipation (P_D) at T_C | 50 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm | — |
| On-Resistance R_DS(on) max at V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Packhaging | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55C to +175C |
| AEC-Q101 Qualification | Qualified (Automotive) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) | — |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) | — |
| Compliance - RoHS | Compliant | — |
| Compliance - REACH | Compliant | — |
| Series | — | OptiMOS 5 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Technology | — | Trench (OptiMOS 5) |
| Bilang ng Pins | — | 8 |
| Configuration | — | Single N-Channel |
| Qualification | — | AEC-Q101 automotive grade |
| Tindminan RoHS | — | Compliant |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |