IAUCN04S7N037GATMA1 vs IAUCN04S7L028ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N037GATMA1 sa pamamagitan ng Infineon at IAUCN04S7L028ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7N037GATMA1 | IAUCN04S7L028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 7 |
| Technology | Trench MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Packhaging | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-TDSON-8-33 (TDSON-8 EP) |
| Uri ng Pagpapasok | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: junction/ambient temperature limits] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | 1.578 nF |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 100 A |
| On-State Resistance (RDS(on)) max | — | 2.80 mOhm at VGS=10 V |
| On-State Resistance (RDS(on)) | — | 2.82 mOhm at VGS=10 V (JLCPCB reported) |
| Gate-Source Threshold (VGS(th)) | — | 1.8 V (typ) |
| Gate Charge (Qg) | — | 24 nC at VGS=10 V |
| Output Capacitance (Coss) | — | 788 pF |
| Reverse Transfer Capacitance (Crss) | — | 36 pF |
| Pwersang Pinahihigpit (Ptot) | — | 58 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |