IAUZ30N08S5N186ATMA1 vs ISK057N04LM6ATLA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ30N08S5N186ATMA1 sa pamamagitan ng Infineon at ISK057N04LM6ATLA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N08S5N186ATMA1 ✓ Nakahanda
Infineon
ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUZ30N08S5N186ATMA1 ISK057N04LM6ATLA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 5 N-Channel Power MOSFET (trench) Trench (OptiMOS 6)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tj) 30 A —
Power Dissipation (PD, Tc) 41 W —
On-State Resistance (RDS(on)) 18.6 mΩ (typical, VGS = 10 V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Hanay ng Temperature na Operasyon -55 °C to +175 °C (automotive) -55 °C to +150 °C
Packhaging PG-TSDSON-8-32 (5x6 mm) —
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Level ng MSL [DATA_NEEDED: MSL rating] 1
Tindminan RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Uri ng Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tc — 64 A
Continuous Drain Current (ID) at Ta — [DATA_NEEDED: ID at TA=25C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — [DATA_NEEDED: RDS(on) max]
RDS(on) typical at VGS=10V — 5.7 mΩ
Gate Charge (Qg total) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 39.1 W
Packhaging / Kaso — PG-VSON-6-1 (PQFN 2x2)
Packaging — Tape & Reel (TR)
DigiKey Part Number — 448-ISK057N04LM6ATLA1TR-ND

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