IAUZN04S7L030ATMA1 vs IAUZ40N06S5L050ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZN04S7L030ATMA1 sa pamamagitan ng Infineon at IAUZ40N06S5L050ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon
IAUZN04S7L030ATMA1 ✓ NakahandaInfineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUZN04S7L030ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 60 A | — |
| Pulsed Drain Current (IDM, Tj) | 100 A | — |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΩ | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Operating Junction Temperature (Tj) | -55C to +175C | — |
| Technology Family | OptiMOS-7 | — |
| Channel Type | N-Channel | — |
| Packhaging | PG-TSDSON-8-44 (S3O8) 3x3 mm² | PG-TSDSON-8-33 (TSDSON-8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) | AEC-Q100 qualified |
| RoHS Compliance | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | — | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | — | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | — | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | — | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 71 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Technology | — | OptiMOS 5 (super-junction N-channel) |
| Tindminan RoHS | — | Compliant |