IPB024N10N5ATMA1 vs IAUCN10S5L110TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB024N10N5ATMA1 sa pamamagitan ng Infineon at IAUCN10S5L110TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ NakahandaInfineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB024N10N5ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Packhaging | PG-TO263-7 (D2PAK-7) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (unlimited floor life at <30C/85% RH) | MSL1 (260°C peak reflow) |
| Packaging | Tape & Reel (13-inch reel) | — |
| Wala sa Halogen | Yes (per Infineon product family policy) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |