IPC50N04S5L5R5ATMA1 vs IPC100N04S51R7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC50N04S5L5R5ATMA1 sa pamamagitan ng Infineon at IPC100N04S51R7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPC50N04S5L5R5ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-34 (SS08 leadless) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Level ng MSL | — | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Tindminan RoHS | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |