IPD135N03LGATMA1 vs BSC030N03LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD135N03LGATMA1 sa pamamagitan ng Infineon at BSC030N03LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Nakahanda
Infineon
BSC030N03LSGATMA1 BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon

BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon

BSC030N03LSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD135N03LGATMA1 BSC030N03LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ OptiMOS 3
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 30 A (Tc) —
Power Dissipation (PD) 31 W (Tc) —
Packhaging / Kaso PG-TO252-3 (DPAK), Surface Mount —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec) —
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec) 66 pF
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ max typical for OptiMOS) —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1
Tindminan RoHS Compliant Compliant
Lead-Free Finish Yes —
Qualification Industrial (Infineon OptiMOS™ standard grade) —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ Tc=25C — 100 A
Continuous Drain Current (Id) @ Ta=25C — 23 A
RDS(on) Max @ VGS=10V — 3 mOhm
RDS(on) Max @ VGS=4.5V — [DATA_NEEDED: typical RDS(on) at VGS=4.5V]
Gate Threshold Voltage (Vgs th) Typ — 2.2 V
Gate Charge (Qg) Typ @ VGS=15V — 55 nC
Input Capacitance (Ciss) Typ — 4.3 nF
Power Dissipation (Pd) @ Ta=25C — 2.5 W
Power Dissipation (Pd) @ Tc=25C — 69 W
Temperature ng Junction na Operasyon — -55C to +150C
Packhaging — PG-TDSON-8-1 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (100% tested)

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