IPD135N03LGATMA1 vs BSC030N03LSGATMA1 Comparison
Detailed side-by-side comparison of IPD135N03LGATMA1 by Infineon and BSC030N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPD135N03LGATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) | 30 A (Tc) | β |
| Power Dissipation (PD) | 31 W (Tc) | β |
| Package / Case | PG-TO252-3 (DPAK), Surface Mount | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Gate Charge (Qg) | Ultra-low (per OptiMOSβ’ family spec) | β |
| Output Charge (Qoss) | Ultra-low (per OptiMOSβ’ family spec) | 66 pF |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max typical for OptiMOS) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free Finish | Yes | β |
| Qualification | Industrial (Infineon OptiMOSβ’ standard grade) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | β | 23 A |
| RDS(on) Max @ VGS=10V | β | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | β | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | β | 55 nC |
| Input Capacitance (Ciss) Typ | β | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | β | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | β | 69 W |
| Operating Junction Temperature | β | -55C to +150C |
| Package | β | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Avalanche Rated | β | Yes (100% tested) |