IPD30N10S3L34ATMA1 vs IPD60R280P7SAUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD30N10S3L34ATMA1 sa pamamagitan ng Infineon at IPD60R280P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD30N10S3L34ATMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Uri ng Transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25°C) | 57 W | — |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΩ @ VGS=10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | — |
| Total Gate Charge (Qg typ) | 23 nC | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Level ng MSL | 1 (JEDEC J-STD-020, 260°C peak reflow) | 1 |
| RoHS / REACH | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max @ ID = 190 µA |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Technology | — | CoolMOS P7 Superjunction (SJ) N-channel |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| Tindminan RoHS | — | Compliant |
| Integrated ESD Protection | — | Yes |