IPD33CN10NGATMA1 vs IPD30N10S3L34ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD33CN10NGATMA1 sa pamamagitan ng Infineon at IPD30N10S3L34ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD33CN10NGATMA1 IPD30N10S3L34ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 27 A —
Power Dissipation (PD, Tc) 58 W —
Technology OptiMOS (Trench) OptiMOS-T (trench)
Packhaging PG-TO252-3 (DPAK), Surface Mount —
Bilang ng Pin 3 (Gate, Drain, Source) —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (TJ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL 1 [DATA_NEEDED: MSL level]
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
Pulsed Drain Current (I_DM) — 180 A
Power Dissipation (P_D, Tc) — 57 W
R_DS(on) max at V_GS=10V — 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max — 2.4 V
Total Gate Charge (Qg) max — 31 nC
Temperature ng Junction na Operasyon — -55 C to +175 C
Package / Supplier Device Package — PG-TO252-3-11 (DPAK)
Pin / Tab Count — 3 (2 + Tab)
Automotive Qualification — AEC-Q101

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