IPD33CN10NGATMA1 vs IPD30N10S3L34ATMA2 Comparison
Detailed side-by-side comparison of IPD33CN10NGATMA1 by Infineon and IPD30N10S3L34ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 β ActiveSpecification Comparison
| Parameter | IPD33CN10NGATMA1 | IPD30N10S3L34ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.92 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 27 A | β |
| Power Dissipation (PD, Tc) | 58 W | β |
| Technology | OptiMOS (Trench) | OptiMOS-T (trench) |
| Package | PG-TO252-3 (DPAK), Surface Mount | β |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D, Tc) | β | 30 A |
| Pulsed Drain Current (I_DM) | β | 180 A |
| Power Dissipation (P_D, Tc) | β | 57 W |
| R_DS(on) max at V_GS=10V | β | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | β | 2.4 V |
| Total Gate Charge (Qg) max | β | 31 nC |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Supplier Device Package | β | PG-TO252-3-11 (DPAK) |
| Pin / Tab Count | β | 3 (2 + Tab) |
| Automotive Qualification | β | AEC-Q101 |