IPD50N10S3L16ATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N10S3L16ATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 ✓ Nakahanda
Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD50N10S3L16ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD50N10S3L16ATMA1 —
Series OptiMOS-T OptiMOS 3
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, T_C=25C) 50 A —
Pulsed Drain Current (I_DM) 200 A —
R_DS(on) max @ V_GS=10V 15 mΩ —
Gate Threshold Voltage (V_GS(th)) 2.5 V (typ) —
Power Dissipation (P_D, T_C=25C) 100 W —
Packhaging PG-TO252-3-11 (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C —
Automotive Qualification AEC-Q101 —
Tindminan RoHS Compliant —
Packaging Tape & Reel —
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Temperature ng Junction na Operasyon — -55 C to +175 C
Packhaging / Kaso — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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