IPD50P04P413ATMA2 vs IPD30N10S3L34ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50P04P413ATMA2 sa pamamagitan ng Infineon at IPD30N10S3L34ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2
IPD50P04P413ATMA2 ✓ NakahandaInfineon
IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50P04P413ATMA2 | IPD30N10S3L34ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | OptiMOS-T (trench) |
| Drain-Source Voltage (VDS) | -40 V | — |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO252-3-313 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| Level ng MSL | 1 | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| Pulsed Drain Current (I_DM) | — | 180 A |
| Power Dissipation (P_D, Tc) | — | 57 W |
| R_DS(on) max at V_GS=10V | — | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | — | 2.4 V |
| Total Gate Charge (Qg) max | — | 31 nC |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Package / Supplier Device Package | — | PG-TO252-3-11 (DPAK) |
| Pin / Tab Count | — | 3 (2 + Tab) |