IPD50P04P413ATMA2 vs IPD30N10S3L34ATMA2 Comparison

Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IPD30N10S3L34ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD50P04P413ATMA2 IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 βœ“ Active
Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 βœ“ Active

Specification Comparison

Parameter IPD50P04P413ATMA2 IPD30N10S3L34ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.92
Polarity / Device Type P-Channel MOSFET β€”
Technology OptiMOS-P2 (Trench) OptiMOS-T (trench)
Drain-Source Voltage (VDS) -40 V β€”
Continuous Drain Current (TC=25Β°C, ID) 50 A β€”
Continuous Drain Current (TC=100Β°C, ID) [DATA_NEEDED: ID @ 100Β°C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] β€”
Power Dissipation (TC=25Β°C, Ptot) 58 W β€”
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΞ© (typ) / 12.6 mΞ© (max) β€”
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Maximum Junction Temperature (TJ,max) 175 Β°C β€”
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-313 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs β€”
MSL Level 1 [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 100 V
Continuous Drain Current (I_D, Tc) β€” 30 A
Pulsed Drain Current (I_DM) β€” 180 A
Power Dissipation (P_D, Tc) β€” 57 W
R_DS(on) max at V_GS=10V β€” 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max β€” 2.4 V
Total Gate Charge (Qg) max β€” 31 nC
Operating Junction Temperature β€” -55 C to +175 C
Package / Supplier Device Package β€” PG-TO252-3-11 (DPAK)
Pin / Tab Count β€” 3 (2 + Tab)

Datasheets & Resources

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