IPD65R380E6ATMA1 vs IPD60R180P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD65R380E6ATMA1 sa pamamagitan ng Infineon at IPD60R180P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD60R180P7ATMA1 IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD65R380E6ATMA1 IPD60R180P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6 —
Uri ng Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS™) Superjunction (SJ) N-channel MOSFET
Drain-Source Voltage (V_DS) 650 V —
Continuous Drain Current (I_D) at T_C 10.6 A —
R_DS(on) max at V_GS=10V 380 mΩ —
R_DS(on) test conditions 3.2 A, 10 V —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 3.5 V typ —
Gate Charge (Q_G) 39 nC at 10 V —
Input Capacitance (C_iss) 710 pF at 100 V —
Power Dissipation (P_D) at T_C 83 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C —
Packhaging PG-TO252-3 (DPAK), surface mount PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (unlimited)
Product Family — CoolMOS P7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 18 A
On-Resistance RDS(on) max at VGS=10V — 180 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Total Power Dissipation (PD) at TC=25C — 72 W
Temperature ng Junction na Operasyon — -55C to +150C
Lead-Free — Yes
Shipping Package — Tape and Reel (ATMA1 suffix)

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