IPL60R285P7AUMA1 vs IKD15N60RFATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R285P7AUMA1 sa pamamagitan ng Infineon at IKD15N60RFATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL60R285P7AUMA1 IPL60R285P7AUMA1 - 600V 285mΩ 13A CoolMOS P7 MOSFET | Infineon

IPL60R285P7AUMA1 - 600V 285mΩ 13A CoolMOS P7 MOSFET | Infineon

IPL60R285P7AUMA1 ✓ Nakahanda
Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R285P7AUMA1 IKD15N60RFATMA1
Brand Infineon Infineon
Kategorya MOSFETs IGBTs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (SJ) N-channel MOSFET TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
Drain-to-Source Voltage (V(BR)DSS) 600 V —
Continuous Drain Current (ID) at Tc=25C 13 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] —
On-State Resistance (RDS(on)) max at VGS=10V 285 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Output Capacitance (Coss) typ [DATA_NEEDED: Coss value] —
Maximum Power Dissition (PD) at Tc=25C 59 W —
Hanay ng Temperature na Operasyon -55C to +150C (junction) —
Packhaging / Kaso PG-VSON-4 (surface mount) —
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single N-channel, 4 pins (Gate, Drain, Source, Tab) —
Tindminan RoHS Compliant —
Gate ESD Protection Integrated —
Level ng MSL 1 (per Infineon PG-VSON-4 family) —
Collector-Emitter Voltage (VCES) — 600 V
Continuous Collector Current (IC at TC=25C) — 30 A
Continuous Collector Current (IC at TC=100C) — 15 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES) — +/-20 V
Gate-Emitter Threshold (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V — 1.5 V (typical)
Maximum Power Dissipation (Ptot) — 250 W
Temperature ng Junction na Operasyon — -40C to +175C
Integrated Anti-Parallel Diode — Yes (RC-Drives Fast, co-packaged)
Packhaging — PG-TO252-3 (DPAK), 3 pins (2 + tab)
Switching Speed Class — Hard-switching, RC-Drives Fast
Target Application — Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance — Compliant

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