IQD063N15NM5SCATMA1 vs ISC037N12NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQD063N15NM5SCATMA1 sa pamamagitan ng Infineon at ISC037N12NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ NakahandaInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQD063N15NM5SCATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 151 A | — |
| Continuous Drain Current (ID) at TA=25°C | 14.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΩ (typ) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | — |
| Total Gate Charge (QG) at VGS=10V | 48 nC | — |
| Input Capacitance (Ciss) | 3.6 nF | — |
| Output Capacitance (Coss) | 900 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Maximum Power Dissition (PD) at TC=25°C | 333 W | — |
| Maximum Power Dissition (PD) at TA=25°C | 3 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55C to +175C (junction) |
| Packhaging | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-TDSON-8 FL (SuperSO8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Technology | — | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |