IQE008N03LM5SCATMA1 vs IQE012N03LM5CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE008N03LM5SCATMA1 sa pamamagitan ng Infineon at IQE012N03LM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IQE008N03LM5SCATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Technology | Trench MOSFET (N-Channel) | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | — |
| Gate Drive Voltage | 10 V (recommended) | — |
| Packhaging | PG-WHSON-8 (Source-Down) | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Configuration | Single N-Channel | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 34 A |
| Pulsed Drain Current (IDM, Tc) | — | 224 A |
| On-Resistance RDS(on), typ | — | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | — | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Technology / Process | — | OptiMOS 5 trench |
| Temperature na Operasyon | — | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible) |