IQE031N08LM6CGSCATMA1 vs IQE012N03LM5CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE031N08LM6CGSCATMA1 sa pamamagitan ng Infineon at IQE012N03LM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE031N08LM6CGSCATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 (40 V to 100 V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| Packhaging | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, typical for OptiMOS 6) | — |
| Avalanche Tested | 100% avalanche tested | — |
| Level ng MSL | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Ta) | — | 34 A |
| Pulsed Drain Current (IDM, Tc) | — | 224 A |
| On-Resistance RDS(on), typ | — | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | — | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Technology / Process | — | OptiMOS 5 trench |
| Temperature na Operasyon | — | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible) |