IQE031N08LM6CGSCATMA1 vs IQE012N03LM5CGATMA1 Comparison
Detailed side-by-side comparison of IQE031N08LM6CGSCATMA1 by Infineon and IQE012N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE031N08LM6CGSCATMA1
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveInfineon
IQE012N03LM5CGATMA1
IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
IQE012N03LM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE031N08LM6CGSCATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.38 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 (40 V to 100 V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS max) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25C | 18 A | β |
| Continuous Drain Current (ID) at Tc | 127 A | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc | 125 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | β |
| Gate Drive Level | Logic-level | β |
| Package | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (junction, typical for OptiMOS 6) | β |
| Avalanche Tested | 100% avalanche tested | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID, Ta) | β | 34 A |
| Pulsed Drain Current (IDM, Tc) | β | 224 A |
| On-Resistance RDS(on), typ | β | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | β | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| Technology / Process | β | OptiMOS 5 trench |
| Operating Temperature | β | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | β | 10 V (logic-level compatible) |