IRF1310NSTRLPBF vs IRL2910STRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF1310NSTRLPBF sa pamamagitan ng Infineon at IRL2910STRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF1310NSTRLPBF IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF1310NSTRLPBF IRL2910STRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 73.3 nC 93.3 nC
Power Dissipation (PD) at TC=25C 160 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +175C (TJ)
Packhaging D2PAK (TO-263AB) D2PAK (TO-263) Surface Mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology IR MOSFET (HEXFET) HEXFET (Infineon/IR)
Built-in Diode Yes (intrinsic body diode) —
Lead-Free / RoHS Yes (PBF suffix) —
Configuration Single with built-in diode —
Continuous Drain Current (ID) @ TC=25C — 55 A
On-Resistance Rds(on) max @ VGS=10V — 26 mOhm
Gate Threshold Voltage VGS(th) typ — Logic-level (1V-2V)
Power Dissipation @ TA=25C — 3.8 W
Power Dissipation @ TC=25C — 200 W
Tindminan RoHS — Compliant
Wala sa Halogen — Compliant (per GlobalSpec)

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