IRF4905LPBF vs IPB019N08N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905LPBF sa pamamagitan ng Infineon at IPB019N08N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΩ OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF4905LPBF | IPB019N08N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) @ Tc=25C | -74 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) max @ Vgs=-10V | 20 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Total Power Dissipation (Ptot) @ Tc=25C | 200 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Rise Time (tr) typ | [DATA_NEEDED: rise time] | — |
| Fall Time (tf) typ | [DATA_NEEDED: fall time] | — |
| Packhaging | TO-262 (I2PAK), through-hole, 3-pin | PG-TO263-7 (D2PAK-6, surface mount) |
| Technology | HEXFET (IR MOSFET) | MOSFET (Metal Oxide) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PbF suffix) | — |
| Avalanche Rated | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 180 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.9 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V |
| Drive Voltage (Rds On Max) | — | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | — | 206 nC |
| Input Capacitance (Ciss) | — | 14.2 nF |
| Output Capacitance (Coss) | — | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | — | 3.84 nF |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Tindminan RoHS | — | Compliant |