IRF7832TRPBF vs IRLR3410TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7832TRPBF sa pamamagitan ng Infineon at IRLR3410TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7832TRPBF IRLR3410TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7832TRPBF —
FET Type N-Channel N-Channel
Technology HEXFET (trench MOSFET) HEXFET (IR MOSFET, 5th generation)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V —
Total Gate Charge (Qg) typical 34 nC —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55 C to +150 C (TJ) -55C to +175C (junction)
Packhaging 8-SO (SOIC-8) TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1 (unlimited floor life at <30C/85% RH)
Tindminan RoHS Compliant —
Lead-Free Yes —
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Power Dissipation (Pd) at Tc=25C — 79 W
On-Resistance RDS(on) max — 105 mOhm
Gate Threshold Voltage Vgs(th) — Logic-level (drive ~4.5V)
Total Gate Charge (Qg) — 22.7 nC
Lead-Free / RoHS — Yes (PBF suffix)
Drain Tab Connection — Tab electrically tied to Drain
Polarity — N-Channel enhancement mode

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