IRFB3306PBF vs IPP120N08S403AKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3306PBF sa pamamagitan ng Infineon at IPP120N08S403AKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS
IPP120N08S403AKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFB3306PBF | IPP120N08S403AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | IR HEXFET (MOSFET) | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25°C | 120 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Rds(on) max @ Vgs=10V | 4.2 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge Qg] | — |
| Gate-Drain Charge (Qgd) typ | 26 nC (nominal) | — |
| Power Dissipation (Pd) at Tc=25°C | 230 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | -55 C to +175 C |
| Packhaging | TO-220AB (through-hole) | TO-220-3-1 (PG-TO220-3-1) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| RoHS / Lead-Free (PbF) | Yes (PbF suffix indicates lead-free, RoHS compliant) | — |
| Avalanche Rated | Yes | — |
| Body Diode | Intrinsic (avalanche-rated) | — |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 120 A |
| Pulsed Drain Current (bondwire-limited) | — | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | — | 278 W (Tc) |
| On-State Resistance (RDS(on)) | — | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max |
| Total Gate Charge (Qg) | — | 167 nC |
| Input Capacitance (Ciss) | — | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.54 K/W |
| Level ng MSL | — | MSL1 (peak reflow up to 260 C) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rating | — | 100% avalanche-tested |
| Tindminan RoHS | — | Compliant (Green Product) |
| Channel Type | — | N-Channel enhancement mode |
| Technology Family | — | OptiMOS |