IRFR3607TRPBF vs IRFR3806TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3607TRPBF sa pamamagitan ng Infineon at IRFR3806TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR3607TRPBF IRFR3806TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc) 56 A —
Calculated Die Drain Current 80 A —
On-State Resistance (RDS(on)) 9 mOhm @ VGS=10V, ID=46A —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 56 nC 22 nC
Gate-to-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD, Tc) 140 W —
Thermal Resistance (RthJC) 1.0 C/W —
Hanay ng Temperature na Operasyon -55C to +175C (TJ max 175C per datasheet convention) -55 C to +175 C
Packhaging TO-252AA (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology IR HEXFET (planar DMOS) HEXFET (IR MOSFET)
Avalanche SOA Fully characterized —
RoHS / Lead-Free Compliant / Pb-free (PBF suffix, JESD-609 e3) —
Transistor Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 43 A
On-State Resistance RDS(on) max — 15.8 mOhm at VGS = 10 V
Power Dissipation (Pd) at Tc = 25 C — 71 W
Packhaging / Kaso — TO-252AA (DPAK)
Gate-Source Voltage (VGS) max — +/- 20 V
Number of Units in IC — 1
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Avalanche Rated — Yes (HEXFET family)

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