IRFR5305TRPBF vs IRFR120NTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRPBF sa pamamagitan ng Infineon at IRFR120NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ Nakahanda
Infineon
IRFR120NTRPBF IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR5305TRPBF IRFR120NTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A 9.4 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET fifth generation)
Level ng MSL 1 —
Tindminan RoHS Compliant (Pb-free PBF suffix) —
Lead-Free Finish Yes (PBF suffix) —
Drain-to-Source Voltage (VDS) — 100 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Hanay ng Temperature ng Junction na Operasyon — -55C to +175C
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita