ISC0802NLSATMA1 vs BSC015NE2LS5IATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC0802NLSATMA1 sa pamamagitan ng Infineon at BSC015NE2LS5IATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC0802NLSATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 150 A | 100 A |
| Continuous Drain Current (ID) at Ta | 22 A | 33 A |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55C to +150C (junction) |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 5 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| On-Resistance RDS(on) Max at VGS=10V | — | 1.5 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 50 W |
| Bilang ng Pin | — | 8 |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: Qg typical value] |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |