ISC0802NLSATMA1 vs BSC015NE2LS5IATMA1 比較
詳細並排比較 ISC0802NLSATMA1 由 Infineon 與 BSC015NE2LS5IATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC0802NLSATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 150 A | 100 A |
| Continuous Drain Current (ID) at Ta | 22 A | 33 A |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| 工作溫度範圍 | -55 C to +175 C | -55C to +150C (junction) |
| 封裝 | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Product Family | — | OptiMOS 5 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| On-Resistance RDS(on) Max at VGS=10V | — | 1.5 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 50 W |
| 腳位數 | — | 8 |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: Qg typical value] |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |