ISC0805NLSATMA1 vs ISC011N03L5SATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC0805NLSATMA1 sa pamamagitan ng Infineon at ISC011N03L5SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC0805NLSATMA1 ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 ✓ Nakahanda
Infineon
ISC011N03L5SATMA1 ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC0805NLSATMA1 ISC011N03L5SATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 5 —
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TA=25°C 13 A —
Continuous Drain Current (ID) at TC=25°C 71 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 74 W —
On-Resistance RDS(on) max at VGS=10V 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] —
On-Resistance RDS(on) max at VGS=4.5V 10.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.3 V —
Gate Charge Qg typ at VGS=4.5V 16 nC —
Input Capacitance Ciss 2.2 nF —
Reverse Transfer Capacitance Crss 23 pF —
Output Capacitance Coss 360 pF —
Packhaging PG-TDSON-8-46 (SuperSO8 5x6) PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 °C to +150 °C —
Tindminan RoHS Compliant Compliant
Series — OptiMOS 5 / StrongIRFET 30 V
Continuous Drain Current (ID) @ Ta=25C — 37 A
Continuous Drain Current (ID) @ Tc=25C — 100 A
Power Dissipation (PD) @ Ta=25C — 2.5 W
Power Dissipation (PD) @ Tc=25C — 96 W
Temperature na Operasyon — -55 C to +175 C (TJ)
Technology — OptiMOS 5 trench MOSFET
Gate Drive — Logic-level compatible
Level ng MSL — 1 (per JEDEC J-STD-020)

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