ISZ072N06NM6ATMA1 vs ISC015N06NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ072N06NM6ATMA1 sa pamamagitan ng Infineon at ISC015N06NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N06NM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ072N06NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Pwersang Pinahihigpit (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Packhaging | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C ( Tj max 175C ) | -55 C to +175 C |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |