K3KL8L80DM-JGCT vs K3KL7L70EM-MGCU Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3KL8L80DM-JGCT sa pamamagitan ng Samsung Electronics at K3KL7L70EM-MGCU sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3KL8L80DM-JGCT - 32Gb LPDDR5X DRAM FBGA-315 | Samsung
K3KL8L80DM-JGCT ✓ NakahandaSamsung Electronics
K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
K3KL7L70EM-MGCU ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3KL8L80DM-JGCT | K3KL7L70EM-MGCU |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | LPDDR5X SDRAM | — |
| Density | 32 Gbit (4 GB) | 12 Gbit (1.5 GB) |
| Organisasyon | x32 | [DATA_NEEDED: organization x32] |
| Packhaging | FBGA-315 (315-ball BGA) | 315-ball FBGA |
| Rate ng Data | Up to 7500 Mbps (family up to 8.5 Gbps) | [DATA_NEEDED: data rate Mbps/pin] |
| Interface | LPDDR5X (JEDEC LPDDR5-compatible, low-power SDRAM) | — |
| Supply Rails | 500 mV / 900 mV / 1.05 V / 1.8 V | — |
| Temperature na Operasyon | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| Power Efficiency | ~20-25% improvement vs LPDDR5 (family figure) | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Application Domains | Mobile, PC, automotive, on-device AI | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| VDD2/VDDQ Class | [DATA_NEEDED: exact VDD2 and VDDQ rail values for -JGCT speed grade] | — |
| Speed Grade Suffix Detail | [DATA_NEEDED: official Samsung ordering-code decode for JGCT suffix] | — |
| Package Dimensions | [DATA_NEEDED: package body dimensions in mm] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Uri ng Memory | — | LPDDR5X SDRAM |
| Speed Grade Suffix | — | -MGCU |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD core voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ I/O voltage] |
| Bank Architecture | — | [DATA_NEEDED: bank group count] |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self-refresh and per-bank refresh per JEDEC LPDDR5X |
| Termination | — | On-Die Termination (ODT) |