K3KLALA0DM-MGCU vs K3KL7L70EM-MGCU Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K3KLALA0DM-MGCU sa pamamagitan ng Samsung Electronics at K3KL7L70EM-MGCU sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K3KLALA0DM-MGCU K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU ✓ Nakahanda
Samsung Electronics
K3KL7L70EM-MGCU K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K3KLALA0DM-MGCU K3KL7L70EM-MGCU
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory LPDDR5X SDRAM LPDDR5X SDRAM
Density 16 Gbit (2 GB) per die 12 Gbit (1.5 GB)
Maximum Data Rate 6400 Mbps per pin —
Interface LPDDR5X (LPDDR5X-class channel) —
Packhaging 315-ball FBGA 315-ball FBGA
Organisasyon [DATA_NEEDED: die organization x16/x32] [DATA_NEEDED: organization x32]
Supply Voltage - Core (VDD1) [DATA_NEEDED: VDD1 voltage] —
Supply Voltage - I/O (VDD2/VDDQ) [DATA_NEEDED: VDDQ voltage] —
Speed Grade Suffix MGCU (6400 Mbps class) -MGCU
Grade Mobile / Low Power Mobile Grade —
Uri ng Pagpapasok Surface Mount Surface Mount
Ball Pitch [DATA_NEEDED: ball pitch mm] —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Place of Origin Johor, Malaysia (per distributor listing) —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
DRAM Process Advanced DRAM node (EUV-class per Samsung LPDDR5X family) —
Manufacturer — Samsung Electronics
Rate ng Data — [DATA_NEEDED: data rate Mbps/pin]
Supply Voltage VDD — [DATA_NEEDED: VDD core voltage]
Supply Voltage VDDQ — [DATA_NEEDED: VDDQ I/O voltage]
Bank Architecture — [DATA_NEEDED: bank group count]
Latensya ng CAS — [DATA_NEEDED: CAS latency]
Refresh — Self-refresh and per-bank refresh per JEDEC LPDDR5X
Termination — On-Die Termination (ODT)
Level ng MSL — [DATA_NEEDED: moisture sensitivity level]

Mga Datasheets at Resources

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