K3KLALA0DM-MGCU vs K3KL7L70EM-MGCU 比較

詳細並排比較 K3KLALA0DM-MGCU 由 Samsung Electronics 與 K3KL7L70EM-MGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K3KLALA0DM-MGCU K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU ✓ 啟用中
Samsung Electronics
K3KL7L70EM-MGCU K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU ✓ 啟用中

規格比較

參數 K3KLALA0DM-MGCU K3KL7L70EM-MGCU
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 LPDDR5X SDRAM LPDDR5X SDRAM
Density 16 Gbit (2 GB) per die 12 Gbit (1.5 GB)
Maximum Data Rate 6400 Mbps per pin —
介面 LPDDR5X (LPDDR5X-class channel) —
封裝 315-ball FBGA 315-ball FBGA
組織 [DATA_NEEDED: die organization x16/x32] [DATA_NEEDED: organization x32]
Supply Voltage - Core (VDD1) [DATA_NEEDED: VDD1 voltage] —
Supply Voltage - I/O (VDD2/VDDQ) [DATA_NEEDED: VDDQ voltage] —
Speed Grade Suffix MGCU (6400 Mbps class) -MGCU
Grade Mobile / Low Power Mobile Grade —
安裝類型 Surface Mount Surface Mount
Ball Pitch [DATA_NEEDED: ball pitch mm] —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Place of Origin Johor, Malaysia (per distributor listing) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
DRAM Process Advanced DRAM node (EUV-class per Samsung LPDDR5X family) —
Manufacturer — Samsung Electronics
資料速率 — [DATA_NEEDED: data rate Mbps/pin]
Supply Voltage VDD — [DATA_NEEDED: VDD core voltage]
Supply Voltage VDDQ — [DATA_NEEDED: VDDQ I/O voltage]
Bank Architecture — [DATA_NEEDED: bank group count]
CAS 延遲 — [DATA_NEEDED: CAS latency]
Refresh — Self-refresh and per-bank refresh per JEDEC LPDDR5X
Termination — On-Die Termination (ODT)
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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