K3LKCKC0BM-MGCP vs K3KL8L80CM-MGCT Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3LKCKC0BM-MGCP sa pamamagitan ng Samsung Electronics at K3KL8L80CM-MGCT sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3LKCKC0BM-MGCP - 64Gb LPDDR5 6400Mbps DRAM | Samsung
K3LKCKC0BM-MGCP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3LKCKC0BM-MGCP | K3KL8L80CM-MGCT |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | LPDDR5 SDRAM (DRAM) | LPDDR5X SDRAM |
| Laki ng Memory | 64 Gbit | — |
| Memory Organization | 2G x32 | — |
| Rate ng Data | 6400 Mbps | — |
| Interface | Parallel | LPDDR5X (JEDEC LPDDR5 extension) |
| Technology | CMOS | — |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| Temperature na Operasyon | -25 C to +85 C | -25C to +85C |
| Packhaging | FBGA-315 (PBGA315) | 315-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Volatile / Non-Volatile | Volatile | — |
| Tindminan RoHS | Compliant | Compliant (per JLCPCB listing) |
| Clock Frequency | [DATA_NEEDED: clock frequency] | 3750 MHz |
| Access Time | [DATA_NEEDED: access time] | — |
| Power Consumption - Active | [DATA_NEEDED: active power] | — |
| Power Consumption - Standby | [DATA_NEEDED: standby power] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Density | — | 32 Gbit (4 GB) |
| Organisasyon | — | x32 |
| Max Data Rate | — | 7500 Mbps |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| Application Segment | — | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |