K4A8G085WB-BCRC vs K4A8G085WB-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BCRC sa pamamagitan ng Samsung Electronics at K4A8G085WB-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ NakahandaSamsung Electronics
K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 1Gx8 1.2V | Samsung
K4A8G085WB-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BCRC | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $4.10 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gb | — |
| Organisasyon | 1G x 8 | — |
| Rate ng Data | 2400 Mbps | — |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0°C to 85°C | 0C to +85C |
| Packhaging | 78-ball FBGA | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Number of Terminals | 78 | 78 |
| Refresh Cycles | 8192 | 8192 |
| Access Time | 0.175 ns | — |
| Technology | CMOS | CMOS, 8Gb B-die |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Uri ng Pagpapasok | — | Surface Mount |
| Interface | — | DDR4 SDRAM parallel interface |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |
| Operating Temperature Grade | — | Commercial (0C to 85C) |