K4A8G085WB-BCTD vs K4A8G085WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BCTD sa pamamagitan ng Samsung Electronics at K4A8G085WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ NakahandaSamsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BCTD | K4A8G085WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $8.53 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 1G x 8 | 1G x 8 |
| Rate ng Data | 2666 Mbps | 2400 Mbps |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Die Revision | B-die | — |
| Packhaging | FBGA-78 (78-ball TFBGA) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | — |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | 8 and 4 |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Mga Karakteristika | ZQ calibration, CRC, CA parity, asynchronous reset | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0°C to 85°C |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Access Time | — | 0.175 ns |
| Technology | — | CMOS |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| RoHS | — | Compliant |